LDR (Light Dependent Resistor) transducers are sensitive to light radiation, consist of semiconductor material doped with elements such as cadmium sulfide (CdS), lead sulfide (PbS) Selenium (Se) and indium antimonide (InSb), which the resistance varies with the light radiation that affects the intercepting surface of the transducer itself. This effect is called photoconductive effect, where the radiant energy causes the rupture of covalent bonds in the semiconductor, creating gaps-electron pairs and thereby increasing the conductivity of the material.
Are coated in epoxy resin is present a high stability and precision.
Are used, for example, in systems twilight switches for the control of external lighting, street lighting, parks, gardens and can be used in systems of measurement and control of light intensity.
Resistance at 0 Lux: 1MW
Resistance to 10Lux: 8-20Kohm
Power dissipation: 100mW
Maximum voltage tolerated 150Vdc Rated
Peak of the spectral response: 540nm
Operating temperature: -30 ° C ~ +70 ° C
|Input Voltage||12 V, 2.7 V, 24 V, 3.3 V, 3.5 V, 5 V, 6 V, 9 V|